2SB1679 BJT

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2SB1679 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 2SB1679
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation: 0.15 W
- SMD Transistor Code: 3V
- Maximum Collector-Base Voltage: 15 V
- Maximum Collector-Emitter Voltage: 10 V
- Maximum Emitter-Base Voltage: 7 V
- Maximum Collector Current: 0.5 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 130 MHz
- Forward Current Transfer Ratio (hFE Value): 130
- Collector Capacitance: 22 pF
- Package: SC-70
- Noise Figure: -