2SB1686 BJT
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2SB1686 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 2SB1686
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation: 30 W
- Maximum Collector-Base Voltage: 110 V
- Maximum Collector-Emitter Voltage: 110 V
- Maximum Collector Current: 6 A
- Transition Frequency: 100 MHz
- Forward Current Transfer Ratio (hFE Value): 5000
- Collector Capacitance: 110 pF
- Package: TO-220F
- Noise Figure: -