2SB1713 BJT


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2SB1713 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 2SB1713
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation: 2 W
- SMD Transistor Code: XW
- Maximum Collector-Base Voltage: 15 V
- Maximum Collector-Emitter Voltage: 12 V
- Maximum Emitter-Base Voltage: 6 V
- Maximum Collector Current: 3 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 280 MHz
- Forward Current Transfer Ratio (hFE Value): 270
- Collector Capacitance: 30 pF
- Package: MPT3
- Noise Figure: -