2SC100 BJT

2SC100 2SC100

2SC100 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SC100
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.15 W
  • Maximum Collector-Base Voltage: 40 V
  • Maximum Collector-Emitter Voltage: 15 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 0.2 A
  • Maximum Operating Junction Temperature: 175 °C
  • Transition Frequency: 300 MHz
  • Forward Current Transfer Ratio (hFE Value): 30
  • Collector Capacitance: 6 pF
  • Package: TO50-1
  • Noise Figure: -