2SC1000GTM BJT

2SC1000GTM 2SC1000GTM

2SC1000GTM BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SC1000GTM
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.4 W
  • Maximum Collector-Base Voltage: 60 V
  • Maximum Collector-Emitter Voltage: 50 V
  • Maximum Collector Current: 0.1 A
  • Maximum Operating Junction Temperature: 125 °C
  • Transition Frequency: 40 MHz
  • Forward Current Transfer Ratio (hFE Value): 400
  • Collector Capacitance: 10 pF
  • Package: TO98-1
  • Noise Figure: -

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