2SC1001 BJT

2SC1001 2SC1001

2SC1001 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SC1001
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 5 W
  • Maximum Collector-Base Voltage: 36 V
  • Maximum Collector-Emitter Voltage: 18 V
  • Maximum Emitter-Base Voltage: 4 V
  • Maximum Collector Current: 0.5 A
  • Maximum Operating Junction Temperature: 175 °C
  • Transition Frequency: 400 MHz
  • Forward Current Transfer Ratio (hFE Value): 30
  • Collector Capacitance: 10 pF
  • Package: TO39
  • Noise Figure: -