2SC1003 BJT

2SC1003 2SC1003

2SC1003 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SC1003
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 20 W
  • Maximum Collector-Base Voltage: 36 V
  • Maximum Collector-Emitter Voltage: 18 V
  • Maximum Emitter-Base Voltage: 4 V
  • Maximum Collector Current: 2 A
  • Maximum Operating Junction Temperature: 175 °C
  • Transition Frequency: 175 MHz
  • Forward Current Transfer Ratio (hFE Value): 25
  • Package: TO62
  • Noise Figure: -