2SC1005 BJT

2SC1005 2SC1005

2SC1005 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SC1005
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 50 W
  • Maximum Collector-Base Voltage: 1100 V
  • Maximum Collector-Emitter Voltage: 600 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 5 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 1 MHz
  • Forward Current Transfer Ratio (hFE Value): 5
  • Package: TO3
  • Noise Figure: -