2SC1070B BJT
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2SC1070B BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 2SC1070B
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 0.2 W
- Maximum Collector-Base Voltage: 30 V
- Maximum Collector-Emitter Voltage: 25 V
- Maximum Emitter-Base Voltage: 4 V
- Maximum Collector Current: 0.02 A
- Maximum Operating Junction Temperature: 125 °C
- Transition Frequency: 750 MHz
- Forward Current Transfer Ratio (hFE Value): 60
- Collector Capacitance: 0.6 pF
- Noise Figure: -<div id="content2"><p> <a href=https