2SC1741AS BJT

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2SC1741AS BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 2SC1741AS
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 0.3 W
- Maximum Collector-Base Voltage: 50 V
- Maximum Collector-Emitter Voltage: 50 V
- Maximum Emitter-Base Voltage: 5 V
- Maximum Collector Current: 0.5 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 250 MHz
- Forward Current Transfer Ratio (hFE Value): 120
- Collector Capacitance: 6.5 pF
- Package: SPT
- Noise Figure: -