2SC2750 BJT

2SC2750 2SC2750
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2SC2750 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SC2750
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 100 W
  • Maximum Collector-Base Voltage: 150 V
  • Maximum Collector-Emitter Voltage: 100 V
  • Maximum Emitter-Base Voltage: 7 V
  • Maximum Collector Current: 15 A
  • Maximum Operating Junction Temperature: 150 °C
  • Forward Current Transfer Ratio (hFE Value): 20
  • Package: TO-3P
  • Noise Figure: -

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