2SC4457 BJT


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2SC4457 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 2SC4457
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 40 W
- Maximum Collector-Base Voltage: 800 V
- Maximum Collector-Emitter Voltage: 500 V
- Maximum Emitter-Base Voltage: 7 V
- Maximum Collector Current: 4 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 18 MHz
- Forward Current Transfer Ratio (hFE Value): 8
- Collector Capacitance: 50 pF
- Package: TO-3PML
- Noise Figure: -