2SC4596E BJT

2SC4596E 2SC4596E
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2SC4596E BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SC4596E
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 25 W
  • Maximum Collector-Base Voltage: 100 V
  • Maximum Collector-Emitter Voltage: 60 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 5 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 120 MHz
  • Forward Current Transfer Ratio (hFE Value): 100
  • Collector Capacitance: 80 pF
  • Package: TO-220F
  • Noise Figure: -

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