2SC4603R BJT

2SC4603R 2SC4603R
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2SC4603R BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SC4603R
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 80 W
  • Maximum Collector-Base Voltage: 900 V
  • Maximum Collector-Emitter Voltage: 800 V
  • Maximum Emitter-Base Voltage: 10 V
  • Maximum Collector Current: 3 A
  • Maximum Operating Junction Temperature: 150 °C
  • Forward Current Transfer Ratio (hFE Value): 10
  • Package: TO-3PF
  • Noise Figure: -

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