2SC4829 BJT


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2SC4829 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 2SC4829
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 0.9 W
- Maximum Collector-Base Voltage: 100 V
- Maximum Collector-Emitter Voltage: 100 V
- Maximum Emitter-Base Voltage: 3 V
- Maximum Collector Current: 0.2 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 240 MHz
- Forward Current Transfer Ratio (hFE Value): 60
- Collector Capacitance: 4.2 pF
- Package: TO-92MOD
- Noise Figure: -