2SC4989 BJT


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2SC4989 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 2SC4989
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 150 W
- Maximum Collector-Base Voltage: 35 V
- Maximum Collector-Emitter Voltage: 17 V
- Maximum Emitter-Base Voltage: 4 V
- Maximum Collector Current: 20 A
- Maximum Operating Junction Temperature: 175 °C
- Transition Frequency: 520 MHz
- Forward Current Transfer Ratio (hFE Value): 10
- Package: T-40E
- Noise Figure: -