2SC5018 BJT

2SC5018 2SC5018

2SC5018 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SC5018
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 1 W
  • Maximum Collector-Base Voltage: 500 V
  • Maximum Collector-Emitter Voltage: 400 V
  • Maximum Emitter-Base Voltage: 7 V
  • Maximum Collector Current: 0.8 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 20 MHz
  • Forward Current Transfer Ratio (hFE Value): 10
  • Package: MT2
  • Noise Figure: -