2SC5063 BJT

2SC5063 2SC5063
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2SC5063 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SC5063
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 25 W
  • Maximum Collector-Base Voltage: 500 V
  • Maximum Collector-Emitter Voltage: 400 V
  • Maximum Emitter-Base Voltage: 7 V
  • Maximum Collector Current: 1.5 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 25 MHz
  • Forward Current Transfer Ratio (hFE Value): 8
  • Package: N-Type
  • Noise Figure: -

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