2SC5089 BJT

2SC5089 2SC5089

2SC5089 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SC5089
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.15 W
  • SMD Transistor Code: MDR_MDO
  • Maximum Collector-Base Voltage: 20 V
  • Maximum Collector-Emitter Voltage: 10 V
  • Maximum Emitter-Base Voltage: 1.5 V
  • Maximum Collector Current: 0.04 A
  • Maximum Operating Junction Temperature: 125 °C
  • Transition Frequency: 7000 MHz
  • Forward Current Transfer Ratio (hFE Value): 50
  • Collector Capacitance: 0.7 pF
  • Package: SC-59
  • Noise Figure: -