2SC5110 BJT

2SC5110 2SC5110
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2SC5110 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SC5110
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.1 W
  • SMD Transistor Code: MGO_MGY
  • Maximum Collector-Base Voltage: 20 V
  • Maximum Collector-Emitter Voltage: 10 V
  • Maximum Emitter-Base Voltage: 3 V
  • Maximum Collector Current: 0.06 A
  • Maximum Operating Junction Temperature: 125 °C
  • Transition Frequency: 4000 MHz
  • Forward Current Transfer Ratio (hFE Value): 80
  • Collector Capacitance: 0.7 pF
  • Package: SC-70
  • Noise Figure: -

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