2SC5125 BJT
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2SC5125 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 2SC5125
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 170 W
- Maximum Collector-Base Voltage: 35 V
- Maximum Collector-Emitter Voltage: 17 V
- Maximum Emitter-Base Voltage: 4 V
- Maximum Collector Current: 25 A
- Maximum Operating Junction Temperature: 175 °C
- Transition Frequency: 175 MHz
- Forward Current Transfer Ratio (hFE Value): 10
- Package: T-40E
- Noise Figure: -