2SC5168 BJT

2SC5168 2SC5168
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2SC5168 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SC5168
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.2 W
  • Maximum Collector-Base Voltage: 50 V
  • Maximum Collector-Emitter Voltage: 50 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 0.1 A
  • Maximum Operating Junction Temperature: 125 °C
  • Transition Frequency: 150 MHz
  • Forward Current Transfer Ratio (hFE Value): 250
  • Collector Capacitance: 2.5 pF
  • Noise Figure: -<div id="content2"><p> <a href=https

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