2SC5213 BJT


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2SC5213 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 2SC5213
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 0.5 W
- SMD Transistor Code: VE_VF_VG
- Maximum Collector-Base Voltage: 120 V
- Maximum Collector-Emitter Voltage: 120 V
- Maximum Emitter-Base Voltage: 5 V
- Maximum Collector Current: 0.1 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 200 MHz
- Forward Current Transfer Ratio (hFE Value): 150
- Collector Capacitance: 2.3 pF
- Package: SC-62
- Noise Figure: -