2SC5230 BJT

2SC5230 2SC5230

2SC5230 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SC5230
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.4 W
  • Maximum Collector-Base Voltage: 20 V
  • Maximum Collector-Emitter Voltage: 10 V
  • Maximum Emitter-Base Voltage: 2 V
  • Maximum Collector Current: 0.07 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 4500 MHz
  • Forward Current Transfer Ratio (hFE Value): 60
  • Collector Capacitance: 0.85 pF
  • Package: TO-92
  • Noise Figure: -