2SC5259 BJT

2SC5259 2SC5259
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2SC5259 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SC5259
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.15 W
  • SMD Transistor Code: MIR_MIO
  • Maximum Collector-Base Voltage: 15 V
  • Maximum Collector-Emitter Voltage: 7 V
  • Maximum Emitter-Base Voltage: 1.5 V
  • Maximum Collector Current: 0.015 A
  • Maximum Operating Junction Temperature: 125 °C
  • Transition Frequency: 9000 MHz
  • Forward Current Transfer Ratio (hFE Value): 50
  • Collector Capacitance: 0.4 pF
  • Package: 2-3F1A
  • Noise Figure: -

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