2SC5303 BJT

2SC5303 2SC5303

2SC5303 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SC5303
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 140 W
  • Maximum Collector-Base Voltage: 1500 V
  • Maximum Collector-Emitter Voltage: 800 V
  • Maximum Emitter-Base Voltage: 6 V
  • Maximum Collector Current: 25 A
  • Maximum Operating Junction Temperature: 150 °C
  • Forward Current Transfer Ratio (hFE Value): 4
  • Package: TO-3JML
  • Noise Figure: -