2SC5370 BJT


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2SC5370 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 2SC5370
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 30 W
- Maximum Collector-Base Voltage: 60 V
- Maximum Collector-Emitter Voltage: 40 V
- Maximum Emitter-Base Voltage: 7 V
- Maximum Collector Current: 12 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 90 MHz
- Forward Current Transfer Ratio (hFE Value): 70
- Collector Capacitance: 120 pF
- Package: TO-220F
- Noise Figure: -