2SC5396 BJT
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2SC5396 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 2SC5396
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 0.24 W
- Maximum Collector-Base Voltage: 25 V
- Maximum Collector-Emitter Voltage: 12 V
- Maximum Emitter-Base Voltage: 3 V
- Maximum Collector Current: 0.02 A
- Maximum Operating Junction Temperature: 125 °C
- Transition Frequency: 400 MHz
- Forward Current Transfer Ratio (hFE Value): 35
- Collector Capacitance: 1.4 pF
- Package: FRAME
- Noise Figure: -