2SC5414 BJT
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2SC5414 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 2SC5414
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 0.4 W
- Maximum Collector-Base Voltage: 20 V
- Maximum Collector-Emitter Voltage: 12 V
- Maximum Emitter-Base Voltage: 2 V
- Maximum Collector Current: 0.1 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 5000 MHz
- Forward Current Transfer Ratio (hFE Value): 90
- Collector Capacitance: 1 pF
- Package: NP
- Noise Figure: -