2SC5513 BJT
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2SC5513 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 2SC5513
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 40 W
- Maximum Collector-Base Voltage: 1500 V
- Maximum Collector-Emitter Voltage: 600 V
- Maximum Emitter-Base Voltage: 5 V
- Maximum Collector Current: 11 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 3 MHz
- Forward Current Transfer Ratio (hFE Value): 5
- Package: TOP-3E
- Noise Figure: -