2SC5519 BJT
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2SC5519 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 2SC5519
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 50 W
- Maximum Collector-Base Voltage: 1700 V
- Maximum Emitter-Base Voltage: 7 V
- Maximum Collector Current: 8 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 3 MHz
- Forward Current Transfer Ratio (hFE Value): 5
- Package: TOP-3E
- Noise Figure: -