2SC5556 BJT


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2SC5556 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 2SC5556
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 0.3 W
- SMD Transistor Code: 3K
- Maximum Collector-Base Voltage: 15 V
- Maximum Collector-Emitter Voltage: 10 V
- Maximum Emitter-Base Voltage: 2 V
- Maximum Collector Current: 0.08 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 5000 MHz
- Forward Current Transfer Ratio (hFE Value): 110
- Collector Capacitance: 0.9 pF
- Package: SC-59
- Noise Figure: -