2SC5556 BJT

2SC5556 2SC5556

2SC5556 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SC5556
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.3 W
  • SMD Transistor Code: 3K
  • Maximum Collector-Base Voltage: 15 V
  • Maximum Collector-Emitter Voltage: 10 V
  • Maximum Emitter-Base Voltage: 2 V
  • Maximum Collector Current: 0.08 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 5000 MHz
  • Forward Current Transfer Ratio (hFE Value): 110
  • Collector Capacitance: 0.9 pF
  • Package: SC-59
  • Noise Figure: -