2SC5580 BJT

2SC5580 2SC5580
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2SC5580 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SC5580
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.15 W
  • SMD Transistor Code: 3R
  • Maximum Collector-Base Voltage: 15 V
  • Maximum Collector-Emitter Voltage: 8 V
  • Maximum Emitter-Base Voltage: 3 V
  • Maximum Collector Current: 0.05 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 600 MHz
  • Forward Current Transfer Ratio (hFE Value): 100
  • Collector Capacitance: 1.2 pF
  • Package: SC-70
  • Noise Figure: -

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