2SC5583 BJT

2SC5583 2SC5583

2SC5583 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SC5583
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 150 W
  • SMD Transistor Code: C5583
  • Maximum Collector-Base Voltage: 1500 V
  • Maximum Collector-Emitter Voltage: 600 V
  • Maximum Emitter-Base Voltage: 7 V
  • Maximum Collector Current: 17 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 3 MHz
  • Forward Current Transfer Ratio (hFE Value): 6
  • Package: TOP-3L
  • Noise Figure: -