2SC5586 BJT
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2SC5586 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 2SC5586
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 70 W
- Maximum Collector-Base Voltage: 900 V
- Maximum Collector-Emitter Voltage: 550 V
- Maximum Collector Current: 5 A
- Transition Frequency: 6 MHz
- Forward Current Transfer Ratio (hFE Value): 10
- Collector Capacitance: 50 pF
- Package: TO-3PF
- Noise Figure: -