2SC5590 BJT

2SC5590 2SC5590
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2SC5590 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SC5590
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 200 W
  • Maximum Collector-Base Voltage: 1700 V
  • Maximum Collector-Emitter Voltage: 800 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 16 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 2 MHz
  • Forward Current Transfer Ratio (hFE Value): 4.8
  • Collector Capacitance: 240 pF
  • Package: 2-21F2A
  • Noise Figure: -

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