2SC5607 BJT

2SC5607 2SC5607
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2SC5607 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SC5607
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.55 W
  • Maximum Collector-Base Voltage: 15 V
  • Maximum Collector-Emitter Voltage: 10 V
  • Maximum Emitter-Base Voltage: 7 V
  • Maximum Collector Current: 5 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 380 MHz
  • Forward Current Transfer Ratio (hFE Value): 200
  • Collector Capacitance: 23 pF
  • Package: SPA
  • Noise Figure: -

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