2SC5686 BJT

2SC5686 2SC5686

2SC5686 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SC5686
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 70 W
  • Maximum Collector-Base Voltage: 2000 V
  • Maximum Collector-Emitter Voltage: 600 V
  • Maximum Emitter-Base Voltage: 7 V
  • Maximum Collector Current: 20 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 3 MHz
  • Forward Current Transfer Ratio (hFE Value): 5
  • Package: TOP-3E-A1
  • Noise Figure: -