2SC5730 BJT


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2SC5730 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 2SC5730
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 0.5 W
- SMD Transistor Code: UM
- Maximum Collector-Base Voltage: 30 V
- Maximum Collector-Emitter Voltage: 30 V
- Maximum Emitter-Base Voltage: 6 V
- Maximum Collector Current: 1 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 270 MHz
- Forward Current Transfer Ratio (hFE Value): 120
- Collector Capacitance: 10 pF
- Package: TSMT3
- Noise Figure: -