2SC5730 BJT

2SC5730 2SC5730
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2SC5730 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SC5730
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.5 W
  • SMD Transistor Code: UM
  • Maximum Collector-Base Voltage: 30 V
  • Maximum Collector-Emitter Voltage: 30 V
  • Maximum Emitter-Base Voltage: 6 V
  • Maximum Collector Current: 1 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 270 MHz
  • Forward Current Transfer Ratio (hFE Value): 120
  • Collector Capacitance: 10 pF
  • Package: TSMT3
  • Noise Figure: -

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