2SC5757 BJT

2SC5757 2SC5757

2SC5757 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SC5757
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.08 W
  • SMD Transistor Code: WE-
  • Maximum Collector-Base Voltage: 10 V
  • Maximum Collector-Emitter Voltage: 3.5 V
  • Maximum Emitter-Base Voltage: 1.5 V
  • Maximum Collector Current: 0.08 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 4500 MHz
  • Forward Current Transfer Ratio (hFE Value): 80
  • Collector Capacitance: 0.9 pF
  • Package: MFPAK
  • Noise Figure: -