2SC5812 BJT

2SC5812 2SC5812
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2SC5812 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SC5812
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.08 W
  • SMD Transistor Code: WG
  • Maximum Collector-Base Voltage: 15 V
  • Maximum Collector-Emitter Voltage: 4 V
  • Maximum Emitter-Base Voltage: 1.5 V
  • Maximum Collector Current: 0.05 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 8000 MHz
  • Forward Current Transfer Ratio (hFE Value): 100
  • Collector Capacitance: 0.4 pF
  • Package: MFPAK
  • Noise Figure: -

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