2SC5829 BJT

2SC5829 2SC5829
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2SC5829 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SC5829
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.05 W
  • SMD Transistor Code: X
  • Maximum Collector-Base Voltage: 10 V
  • Maximum Collector-Emitter Voltage: 7 V
  • Maximum Emitter-Base Voltage: 2 V
  • Maximum Collector Current: 0.01 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 4000 MHz
  • Forward Current Transfer Ratio (hFE Value): 100
  • Collector Capacitance: 0.4 pF
  • Package: ML3-N2
  • Noise Figure: -

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