2SC5830 BJT

2SC5830 2SC5830

2SC5830 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SC5830
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 35 W
  • Maximum Collector-Base Voltage: 1000 V
  • Maximum Collector-Emitter Voltage: 450 V
  • Maximum Collector Current: 8 A
  • Transition Frequency: 4 MHz
  • Forward Current Transfer Ratio (hFE Value): 10
  • Collector Capacitance: 95 pF
  • Package: TO-220F
  • Noise Figure: -