2SC5831 BJT

2SC5831 2SC5831

2SC5831 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SC5831
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 10 W
  • Maximum Collector-Base Voltage: 55 V
  • Maximum Collector-Emitter Voltage: 55 V
  • Maximum Emitter-Base Voltage: 6 V
  • Maximum Collector Current: 2 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 180 MHz
  • Forward Current Transfer Ratio (hFE Value): 1000
  • Package: TO-126ML
  • Noise Figure: -