2SC5882 BJT

2SC5882 2SC5882
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2SC5882 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SC5882
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.08 W
  • Maximum Collector-Base Voltage: 20 V
  • Maximum Collector-Emitter Voltage: 12 V
  • Maximum Emitter-Base Voltage: 3 V
  • Maximum Collector Current: 0.05 A
  • Maximum Operating Junction Temperature: 125 °C
  • Transition Frequency: 4500 MHz
  • Forward Current Transfer Ratio (hFE Value): 50
  • Collector Capacitance: 1 pF
  • Noise Figure: -<div id="content2"><p> <a href=https

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