2SC5980 BJT

2SC5980 2SC5980
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2SC5980 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SC5980
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 15 W
  • Maximum Collector-Base Voltage: 100 V
  • Maximum Collector-Emitter Voltage: 50 V
  • Maximum Emitter-Base Voltage: 6 V
  • Maximum Collector Current: 8 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 330 MHz
  • Forward Current Transfer Ratio (hFE Value): 250
  • Collector Capacitance: 28 pF
  • Package: TP
  • Noise Figure: -

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