2SC5999 BJT
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2SC5999 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 2SC5999
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 40 W
- Maximum Collector-Base Voltage: 120 V
- Maximum Collector-Emitter Voltage: 50 V
- Maximum Emitter-Base Voltage: 6 V
- Maximum Collector Current: 25 A
- Maximum Operating Junction Temperature: 150 °C
- Forward Current Transfer Ratio (hFE Value): 200
- Collector Capacitance: 170 pF
- Package: SMP-FD
- Noise Figure: -