2SC6012 BJT

2SC6012 2SC6012
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2SC6012 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SC6012
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 60 W
  • Maximum Collector-Base Voltage: 1700 V
  • Maximum Emitter-Base Voltage: 7 V
  • Maximum Collector Current: 15 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 2.1 MHz
  • Forward Current Transfer Ratio (hFE Value): 7
  • Package: SC-94_TOP-3E-A1
  • Noise Figure: -

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