2SC6023 BJT


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2SC6023 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 2SC6023
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 0.12 W
- Maximum Collector-Base Voltage: 9 V
- Maximum Collector-Emitter Voltage: 3.5 V
- Maximum Emitter-Base Voltage: 2 V
- Maximum Collector Current: 0.035 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 18000 MHz
- Forward Current Transfer Ratio (hFE Value): 80
- Package: MCP4
- Noise Figure: -