2SD1381F BJT

2SD1381F 2SD1381F
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2SD1381F BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SD1381F
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 5 W
  • Maximum Collector-Base Voltage: 100 V
  • Maximum Collector-Emitter Voltage: 80 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 1 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 100 MHz
  • Forward Current Transfer Ratio (hFE Value): 82
  • Collector Capacitance: 20 pF
  • Package: TO-126FP
  • Noise Figure: -

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